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DS2050W 3.3V Single-Piece 4Mb
Nonvolatile SRAM
AC ELECTRICAL CHARACTERISTICS
(V CC = 3.3V ±0.3V, T A = -40 ° C to +85 ° C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
UNITS
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
t RC
t ACC
t OE
t CO
100
100
50
100
ns
ns
ns
ns
OE or CE to Output Active
Output High Impedance from
Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Impedance from WE
Output Active from WE
Data Setup Time
Data Hold Time
t COE
t OD
t OH
t WC
t WP
t AW
t WR1
t WR2
t ODW
t OEW
t DS
t DH1
t DH2
(Note 2)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 2)
(Note 2)
(Note 6)
(Note 4)
(Note 5)
5
5
100
75
0
5
20
5
40
0
20
35
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
POWER-DOWN/POWER-UP TIMING
(T A = -40 ° C to +85 ° C.)
PARAMETER
V CC Fail Detect to CE and WE Inactive
SYMBOL
t PD
CONDITIONS
(Note 7)
MIN
TYP
MAX
1.5
UNITS
μs
V CC Slew from V TP to 0V
V CC Slew from 0V to V TP
V CC Valid to CE and WE Inactive
V CC Valid to End of Write Protection
t F
t R
t PU
t REC
150
150
2
125
μs
μs
ms
ms
V CC Fail Detect to RST Active
t RPD
(Note 1)
3.0
μs
V CC Valid to RST Inactive
t RPU
(Note 1)
225
350
525
ms
DATA RETENTION
(T A = +25 ° C.)
PARAMETER
Expected Data-Retention Time (Per Charge)
SYMBOL
t DR
CONDITIONS
(Note 8)
MIN
2
TYP
3
MAX
UNITS
years
AC TEST CONDITIONS
Input Pulse Levels:
Input Pulse Rise and Fall Times:
Input and Output Timing Reference Level:
Output Load:
V IL = 0.0V, V IH = 2.7V
5ns
1.5V
1 TTL Gate + C L (100pF) including scope and jig
_____________________________________________________________________
3
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